A review of CMOS latchup and electrostatic discharge (ESD) in bipolar complimentary MOSFET (BiCMOS) Silicon Germanium technologies: Part II

A review of CMOS latchup and electrostatic discharge (ESD) in bipolar complimentary MOSFET (BiCMOS) Silicon Germanium technologies: Part II—Latchup

Published:2005-03 Issue:3-4 Volume:45 Page:437-455
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Voldman Steven H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference38 articles.

1. Radiation induced integrated circuit latchup;Leavy;IEEE Trans Nucl Sci,1969

2. Transient radiation response of complementary symmetry MOS integrated circuits;Dennehy;IEEE Trans Nucl Sci,1969

3. Latchup in CMOS integrated circuits;Gregory;IEEE Trans Nucl Sci,1973

4. Gregory BL. CMOS latchup and prevention. Sandia Laboratories Report SAND75-0371, Alburquerque, NM, June 1975

5. Barnes CE et al. Latchup prevention in CMOS. Sandia Laboratory Report SAND76-0048, Alburquerque, NM, 1976

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Construction of insulating layers on conductive nickel-plated core particles by thermal fusion of heterocoagulated polymer shell particles;Colloids and Surfaces A: Physicochemical and Engineering Aspects;2022-08

2. Effect of high-temperature on holding characteristics in MOSFET ESD protecting device;Acta Physica Sinica;2022

3. ESD in Silicon Germanium;The ESD Handbook;2021-03-26

4. ESD RF Design;The ESD Handbook;2021-03-26

5. Radiation Semiconductor Process and Layout Solutions;Integrated Circuit Design for Radiation Environments;2019-12-06