3D stackable cryogenic InGaAs HEMTs for heterogeneous and monolithic 3D integrated highly scalable quantum computing systems
Author:
Affiliation:
1. KAIST,School of Electrical Engineering,Daejeon,Korea
2. KANC,Suwon,Korea
3. KBSI,Center for Scientific Instrumentation,Daejeon,Korea
Funder
National Research Foundation of Korea
Korea Basic Science Institute
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9830116/9830138/09830449.pdf?arnumber=9830449
Reference12 articles.
1. VLSI;chakraborty,2021
2. VLSI;xie,2021
3. Stackable InGaAs-on-Insulator HEMTs for Monolithic 3-D Integration
4. RFIC;gong,2019
5. VLSI;kim,2014
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1. Thermal Studies of 3-D Stacked InGaAs HEMTs and Mitigation Strategy of Self-Heating Effect Using Buried Metal Insertion;IEEE Transactions on Electron Devices;2024-08
2. Influence of Channel Structure on the Subthreshold Swing of InGaAs HEMTs at Cryogenic Temperatures Down to 4 K;IEEE Transactions on Electron Devices;2024-05
3. High-Pressure Deuterium Annealing for Trap Passivation for a 3-D Integrated Structure;IEEE Transactions on Electron Devices;2024-04
4. Heterogeneous 3-D Sequential CFETs With Ge (110) Nanosheet p-FETs on Si (100) Bulk n-FETs;IEEE Transactions on Electron Devices;2024-01
5. Effects of Back Metal on the DC and RF Characteristics of 3D Stacked InGaAs RF Device for Monolithic 3D RF Applications;IEEE Electron Device Letters;2023-04
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