A 32Mb Embedded Flash Memory based on 28nm with the best Cell Efficiency and Robust Design achievement featuring 13.48Mb/mm<sup>2</sup> at 0.85V-Reference-Cited by-同舟云学术

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A 32Mb Embedded Flash Memory based on 28nm with the best Cell Efficiency and Robust Design achievement featuring 13.48Mb/mm² at 0.85V

Published:2022-06-12 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
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Author:

Shin Hyunjin¹,Won Sangkyung¹,Kim Dohui¹,Choi Byunghun¹,Kim Gyusung¹,Oh Myeonghee¹,Choi Jaeseung¹,Kye Jongwook¹

Affiliation:

1. Samsung Electronics Co. Ltd,Foundry Business,Hwaseong-Si,Gyeonggi-Do,Korea

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9830116/9830138/09830151.pdf?arnumber=9830151

Reference4 articles.

1. High-speed and Ultra-low Power IoT One-chip (MCU + Connectivity-chip) on a Robust 28-nm Embedded Flash Process

2. A 210mV 7.2MHz 8T SRAM with Dual Data-Aware Write-Assists and Negative Read Wordline for High Cell-Stability, Speed and Area-Efficiency;chen;Symposium on VLSI Circuits Digest of Technical Papers C130-131,2013

3. A 31 ns Random Cycle VCAT-Based 4F$^{2}$ DRAM With Manufacturability and Enhanced Cell Efficiency

4. Reliability Prediction of Highly Scaled MOSFET Devices via Fractal Structure of Spatial Defects

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transitioning eMRAM from Pilot Project to Volume Production;2023 IEEE International Test Conference (ITC);2023-10-07

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