A 31 ns Random Cycle VCAT-Based 4F$^{2}$ DRAM With Manufacturability and Enhanced Cell Efficiency-Reference-Cited by-同舟云学术

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A 31 ns Random Cycle VCAT-Based 4F$^{2}$ DRAM With Manufacturability and Enhanced Cell Efficiency

Published:2010-04 Issue:4 Volume:45 Page:880-888
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Song Ki-Whan,Kim Jin-Young,Yoon Jae-Man,Kim Sua,Kim Huijung,Chung Hyun-Woo,Kim Hyungi,Kim Kanguk,Park Hwan-Wook,Kang Hyun Chul,Tak Nam-Kyun,Park Dukha,Kim Woo-Seop,Lee Yeong-Taek,Oh Yong Chul,Jin Gyo-Young,Yoo Jeihwan,Park Donggun,Oh Kyungseok,Kim Changhyun,Jun Young-Hyun

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/5437471/05437489.pdf?arnumber=5437489

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