Investigation on Recrystallization Channel for Vertical C-Shaped-Channel Nanosheet FETs by Laser Annealing
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Published:2023-06-01
Issue:11
Volume:13
Page:1786
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ISSN:2079-4991
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Container-title:Nanomaterials
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language:en
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Short-container-title:Nanomaterials
Author:
Chen Zhuo12, Zhu Huilong1, Wang Guilei3ORCID, Wang Qi1, Xiao Zhongrui12, Zhang Yongkui1, Liu Jinbiao12, Lu Shunshun1, Du Yong1, Yu Jiahan12, Xiong Wenjuan1, Kong Zhenzhen12ORCID, Du Anyan1, Yan Zijin12, Zheng Yantong12
Affiliation:
1. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China 2. Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 100049, China 3. Process Integration, Beijing Superstring Academy of Memory Technology, Beijing 100176, China
Abstract
Transistor scaling has become increasingly difficult in the dynamic random access memory (DRAM). However, vertical devices will be good candidates for 4F2 DRAM cell transistors (F = pitch/2). Most vertical devices are facing some technical challenges. For example, the gate length cannot be precisely controlled, and the gate and the source/drain of the device cannot be aligned. Recrystallization-based vertical C-shaped-channel nanosheet field-effect transistors (RC-VCNFETs) were fabricated. The critical process modules of the RC-VCNFETs were developed as well. The RC-VCNFET with a self-aligned gate structure has excellent device performance, and its subthreshold swing (SS) is 62.91 mV/dec. Drain-induced barrier lowering (DIBL) is 6.16 mV/V.
Funder
National Natural Science Foundation of China Beijing Superstring Academy of Memory Technology
Subject
General Materials Science,General Chemical Engineering
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