Critical Process Features Enabling Aggressive Contacted Gate Pitch Scaling for 3nm CMOS Technology and Beyond
Author:
Affiliation:
1. Taiwan Semiconductor Manufacturing Company, Hsinchu,Taiwan,R.O.C
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019565.pdf?arnumber=10019565
Reference6 articles.
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