High-speed and Ultra-low Power IoT One-chip (MCU + Connectivity-chip) on a Robust 28-nm Embedded Flash Process-Reference-Cited by-同舟云学术

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High-speed and Ultra-low Power IoT One-chip (MCU + Connectivity-chip) on a Robust 28-nm Embedded Flash Process

Published:2019-06 Issue: Volume: Page:
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Container-title:2019 Symposium on VLSI Technology
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Author:

Jeon Changmin,Woo Jongsung,Yeom Kyongsik,Seo Minji,Hong Eunmi,Jeong Youngcheon,Lee Sangjin,Min Hongkook,Kim DalHwan,Lee HyunChang,Cho Soomin,Oh MyeongHee,Kim Ji-Sung,Lee Hyosang,Park JinChul,Kim Cheolmin,Sung HyukJun,Yoon Seongho,Kim Joonsuk,Lee Yong Kyu,Park Ki Chul,Jeong Gitae,Yoon Jongshik,Jung EunSeung

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8766306/8776475/08776557.pdf?arnumber=8776557

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low Power, Energy Efficient and High Performance Triple Mode Logic for IoT Applications;2024 19th Conference on Ph.D Research in Microelectronics and Electronics (PRIME);2024-06-09

2. Area-Efficient Integration of Embedded 0.5F0.5R Hybrid Memory and High Mobility Logic Device on Ge;IEEE Transactions on Electron Devices;2023-10

3. A 32Mb Embedded Flash Memory based on 28nm with the best Cell Efficiency and Robust Design achievement featuring 13.48Mb/mm² at 0.85V;2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits);2022-06-12

4. Non-Volatile Flash Memory on Ge With an Oxidation-Induced Self-Assembled Charge Trapping Layer;IEEE Electron Device Letters;2022-06

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