FinFET with Contact over Active-Gate for 5G Ultra-Wideband Applications
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9264988/9264985/09265095.pdf?arnumber=9265095
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Radio frequency FinFET bulk silicon technology;New Materials and Devices Enabling 5G Applications and Beyond;2024
2. Device-Level Thermal Management in Multifin SOI-FinFET Through Fin Pitch Design Employing Cooperative Game Theory;IEEE Transactions on Components, Packaging and Manufacturing Technology;2023-06
3. Improving Performance and Power by Co-Optimizing Middle-of-Line Routing, Pin Pattern Generation, and Contact over Active Gates in Standard Cell Layout Synthesis;ACM/IEEE International Symposium on Low Power Electronics and Design;2022-08
4. RF Performance of Stacked Si Nanosheets/Nanowires;IEEE Electron Device Letters;2022-07
5. Fin-shape Optimization for Single Diffusion Break Device Performance in FinFET Technology;2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA);2022-04-18
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