RF Performance of Stacked Si Nanosheets/Nanowires-Reference-Cited by-同舟云学术

RF Performance of Stacked Si Nanosheets/Nanowires

Published:2022-07 Issue:7 Volume:43 Page:1017-1020
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lin Hsin-Cheng¹^ORCID,Chou Tao¹,Chiu Kung-Ying¹,Jan Sun-Rong¹,Chung Chia-Che¹^ORCID,Tsen Chia-Jung¹,Liu C. W.²^ORCID

Affiliation:

1. Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan

2. Department of Electrical Engineering, Graduate School of Advanced Technology, Graduate Institute of Electronics Engineering, and the Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Ministry of Education, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9811240/09785976.pdf?arnumber=9785976

Reference33 articles.

1. FinFET with Contact over Active-Gate for 5G Ultra-Wideband Applications

2. RF Performance Optimization of Stacked Si Nanosheet nFETs

3. High-Frequency Bipolar Transistors

4. Sub-Micrometer InP/InGaAs Heterojunction Bipolar Transistors with fT = 400 GHz and fmax < 500 GHz

5. Extreme scaling enabled by 5 tracks cells: Holistic design-device co-optimization for FinFETs and lateral nanowires

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