A New Sense Amplifier Design with Improved Input Referred Offset Characteristics for Energy-Efficient SRAM-Reference-Cited by-同舟云学术

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A New Sense Amplifier Design with Improved Input Referred Offset Characteristics for Energy-Efficient SRAM

Published:2017-01 Issue: Volume: Page:
ISSN:
Container-title:2017 30th International Conference on VLSI Design and 2017 16th International Conference on Embedded Systems (VLSID)
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Author:

Reniwal B. S.,Singh P.,Vijayvargiya V.,Vishvakarma S. K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7880094/7884715/07884800.pdf?arnumber=7884800

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A capacitor-coupled stacked-based sense amplifier with enhanced offset tolerance for low power SRAM;IEICE Electronics Express;2023-12-25

2. Design of High-Speed, Low-Power Sensing Circuits for Nano-Scale Embedded Memory;Sensors;2023-12-19

3. Voltage Boosted Schmitt Trigger Sense Amplifier (VBSTSA) With Improved Offset And Reaction Time For High Speed SRAMs;2023 36th International Conference on VLSI Design and 2023 22nd International Conference on Embedded Systems (VLSID);2023-01

4. An offset cancellation technique for SRAM sense amplifier based on relation of the delay and offset;Microelectronics Journal;2022-10

5. A Seamless, Reconfigurable, and Highly Parallel In-Memory Stochastic Computing Approach With Resistive Random Access Memory Array;IEEE Transactions on Electron Devices;2021-01

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