Funder
National Natural Science Foundation of China
Ministry of Science and Technology of the People's Republic of China
National Key Research and Development Program of China
Reference35 articles.
1. A low voltage SRAM using resonant supply boosting;Joshi;IEEE J. Solid State Circ.,2017
2. A 0.2 V 32-kb 10T SRAM with 41 nW standby power for IoT applications;Chien;IEEE Trans. Circuit. Syst. I: Reg. Papers,2018
3. 10T SRAM using half-VDD precharge and row-wise dynamically powered read port for low switching power and ultralow RBL leakage;Maroof;IEEE Trans. Very Large Scale Integr. Syst.,2017
4. 13.7 A reconfigurable sense amplifier with auto-zero calibration and pre-amplification in 28nm CMOS;Giridhar,2014
5. A 28 nm 2 Mbit 6 T SRAM with highly configurable low-voltage write-ability assist implementation and capacitor-based sense-amplifier input offset compensation;Sinangil;IEEE J. Solid State Circ.,2016
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