ScAlN-GaN Transistor Technology for Millimeter-wave Ultra-high Power and Efficient MMICs
Author:
Affiliation:
1. Raytheon Company,USA
2. Naval Research Laboratory,USA
Funder
DARPA DREAM (Dynamic Range Enhanced Electronics and Materials)
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9865233/9865240/09865268.pdf?arnumber=9865268
Reference14 articles.
1. International Reliability;zanoni;Physics Symposium IRPS,0
2. Influence of Field Plate on the Transient Operation of the AlGaN/GaN HEMT
3. Field-Plate Engineering for HFETs
4. Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs
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1. High-power and efficiency W-band InAlGaN/AlN/GaN high-electron-mobility transistors for future high-capacity wireless communications;Applied Physics Express;2024-08-01
2. N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated Pout at 94 GHz;IEEE Microwave and Wireless Technology Letters;2024-07
3. Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz;IEEE Microwave and Wireless Technology Letters;2024-02
4. AlScN High Electron Mobility Transistors: Integrating High Piezoelectric, High K Dielectric, and Ferroelectric Functionality;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
5. Voltage-margin limiting mechanisms of AlScN-based HEMTs;Applied Physics Letters;2023-07-17
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