Characterization of inversion and accumulation layer electron transport in 4H and 6H-SiC MOSFETs on implanted P-type regions
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/18988/00877161.pdf?arnumber=877161
Cited by 32 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Compact model for MFIS-NCFETs considering deep-level interface trap states;Journal of Computational Electronics;2024-07-09
2. Structure optimization design based on 4h-SiC MOS tube;International Conference on Optoelectronic Information and Functional Materials (OIFM 2023);2023-08-07
3. Bias Temperature Instability of 4H-SiC p- and n-Channel MOSFETs Induced by Negative Stress at 200 °C;IEEE Transactions on Electron Devices;2022-06
4. Analysis of Mobility for 4H-SiC N/P-Channel MOSFETs Up To 300 °C;IEEE Transactions on Electron Devices;2021-08
5. A surface potential-based DC model considering interface trap states for 4H-SiC power MOSFETs;AIP Advances;2020-09-01
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