A surface potential-based DC model considering interface trap states for 4H-SiC power MOSFETs-Reference-Cited by-同舟云学术

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A surface potential-based DC model considering interface trap states for 4H-SiC power MOSFETs

Published:2020-09-01 Issue:9 Volume:10 Page:095224
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Liu Yuan¹,Peng Zijuan²,Lu Yudong³,Wang Bingqi²,Deng Wanling²^ORCID

Affiliation:

1. School of Automation, Guangdong University of Technology, Guangzhou 510006, China

2. Department of Electronic Engineering, Jinan University, Guangzhou 510630, China

3. Department of Guangzhou GRG Metrology & Test Co., Ltd., Guangzhou 510656, China

Funder

Key-Area Research and Development Program of Guangdong Province

Science and Technology Program of Guangdong

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0023293

Reference25 articles.

1. PSP: An Advanced Surface-Potential-Based MOSFET Model for Circuit Simulation

2. An Analytical Surface-Potential-Based Drain Current Model of Full Depleted Polysilicon TFTs

3. HiSIM2: Advanced MOSFET Model Valid for RF Circuit Simulation

4. Characterization of inversion and accumulation layer electron transport in 4H and 6H-SiC MOSFETs on implanted P-type regions

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