Compact model for MFIS-NCFETs considering deep-level interface trap states
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Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s10825-024-02194-1.pdf
Reference33 articles.
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2. Pahwa, G., Agarwal, A., Chauhan, Y.S.: Numerical investigation of short-channel efects in negative capacitance MFIS and MFMIS transistors: subthreshold behavior. IEEE Trans. Electron Dev. 65(11), 5130–5136 (2018). https://doi.org/10.1109/ted.2018.2870519
3. Sun, J., Li, Y., Cao, L.: A model for nonvolatile p-channel metal–ferroel-ectric–metal–insulator–semiconductor field-effect transistors (MFMIS FETs). J. Comput. Electron. 18, 527–533 (2019). https://doi.org/10.1007/s10825-019-01320-8
4. Hoffmann, M., Pešić, M., Slesazeck, S., Schroeder, U., Mikolajick, T.: Modeling and design considerations for negative capacitance field-effect transistors. In: 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (2017). https://doi.org/10.1109/ULIS.2017.7962577
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