Ultra-low NMOS contact resistivity using a novel plasma-based DSS implant and laser anneal for post 7 nm nodes-Reference-Cited by-同舟云学术

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Ultra-low NMOS contact resistivity using a novel plasma-based DSS implant and laser anneal for post 7 nm nodes

Published:2016-06 Issue: Volume: Page:
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Container-title:2016 IEEE Symposium on VLSI Technology
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Author:

Ni C.-N.,Rao K.V.,Khaja F.,Sharma S.,Tang S.,Chen J. J.,Hollar K. E.,Breil N.,Li X.,Jin M.,Lazik C.,Lee J.,Maynard H.,Variam N.,Mayur A. J.,Kim S.,Chung H.,Chudzik M.,Hung R.,Yoshida N.,Kim N.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7569798/7573353/07573383.pdf?arnumber=7573383

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystallinity and composition of Sc_1−x(−y)Si_x(P_y) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications;Japanese Journal of Applied Physics;2024-02-06

2. Novel Scanning Nanosecond Laser Anneal with Variable Dwell and Real-time Process Control for Advanced Logic and Memory Applications;2023 21st International Workshop on Junction Technology (IWJT);2023-06-08

3. 半导体集成电路制造中的准分子激光退火研究进展;Infrared and Laser Engineering;2023

4. A snapshot review on metal–semiconductor contact exploration for 7-nm CMOS technology and beyond;MRS Advances;2022-11-21

5. Comprehensive Analysis of Phosphorus-Doped Silicon Annealed by Continuous-Wave Laser Beam at High Scan Speed;Materials;2022-11-08

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