A comparison of arsenic and phosphorus extension by Room Temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions-Reference-Cited by-同舟云学术

A comparison of arsenic and phosphorus extension by Room Temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions

Published:2015-06 Issue: Volume: Page:
ISSN:
Container-title:2015 Symposium on VLSI Technology (VLSI Technology)
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Author:

Sasaki Y.,Ritzenthaler R.,De Keersgieter A.,Chiarella T.,Kubicek S.,Rosseel E.,Waite A.,del Agua Borniquel J.,Colombeau B.,Chew S. A.,Kim M. S.,Schram T.,Demuynck S.,Vandervorst W.,Horiguchi N.,Mocuta D.,Mocuta A.,Thean A. V-Y.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7198535/7223619/07223691.pdf?arnumber=7223691

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