Highly reliable, 65 nm-node Cu dual damascene interconnects with full porous-SiOCH (k=2.5) films for low-power ASICs-Reference-Cited by-同舟云学术

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Highly reliable, 65 nm-node Cu dual damascene interconnects with full porous-SiOCH (k=2.5) films for low-power ASICs

Published:2004 Issue: Volume: Page:
ISSN:
Container-title:Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.
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Author:

Ueki M.,Narihiro M.,Ohtake H.,Tagami M.,Tada M.,Ito F.,Harada Y.,Abe M.,Inoue N.,Arai K.,Takeuchi T.,Saito S.,Onodera T.,Furutake N.,Hiroi M.,Sekine M.,Hayashi Y.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/9327/29638/01345393.pdf?arnumber=1345393

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-k Dielectrics;Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications;2009

2. Lithography for Cu Damascene Fabrication;Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications;2009

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