An Integrated Phase Change Memory Cell With Ge Nanowire Diode For Cross-Point Memory-Reference-Cited by-同舟云学术

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An Integrated Phase Change Memory Cell With Ge Nanowire Diode For Cross-Point Memory

Published:2007-06 Issue: Volume: Page:
ISSN:
Container-title:2007 IEEE Symposium on VLSI Technology
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Author:

Zhang Yuan,Kim SangBum,McVittie Jim P.,Jagannathan Hemanth,Ratchford Josh B.,Chidsey Christopher E.D.,Nishi Yoshio,Wong H.-S. Philip

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4339664/4339665/04339742.pdf?arnumber=4339742

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. A Discharge-Path-Based Sensing Circuit With OTS Snapback Current Protection for Phase Change Memories;IEEE Access;2022

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