THE FIRST PRINCIPLE STUDY OF COMPARISON OF DIVALENT AND TRIVALENT IMPURITY IN RRAM DEVICES USING GGA+U-Reference-Cited by-同舟云学术

THE FIRST PRINCIPLE STUDY OF COMPARISON OF DIVALENT AND TRIVALENT IMPURITY IN RRAM DEVICES USING GGA+U

Published:2021-03-05 Issue:06 Volume:28 Page:2150039
ISSN:0218-625X
Container-title:Surface Review and Letters
language:en
Short-container-title:Surf. Rev. Lett.

Author:

KHERA EJAZ AHMAD¹,ULLAH HAFEEZ¹,IMRAN MUHAMMAD²,ALGADI HASSAN³⁴,HUSSAIN FAYYAZ⁵,KHALIL RANA MUHAMMAD ARIF⁵

Affiliation:

1. Biophotonics Imaging Techniques Laboratory, Institute of Physics, The Islamia University of Bahawalpur, Pakistan

2. Department of Physics, Government College University Faisalabad, 38000, Pakistan

3. Department of Electrical Engineering, Faculty of Engineering, Najran University, P. O. Box 1988, Najran 11001, Saudi Arabia

4. Promising Center for Sensors and Electronic Devices (PCSED), Najran University, P. O. Box 1988, Najran 11001, Saudi Arabia

5. Materials Simulation Research Laboratory (MSRL), Department of Physics, Bahauddin Zakariya University, Multan Pakistan, 60800, Pakistan

Abstract

Resistive switching (RS) performances had prodigious attention due to their auspicious potential for data storage. Oxide-based devices with metal insulator metal (MIM) structure are more valuable for RS applications. In this study, we have studied the effect of divalent (nickel) as well as trivalent (aluminum) dopant without and with oxygen vacancy ([Formula: see text] in hafnia ([Formula: see text]-based resistive random-access memory (RRAM) devices. All calculations are carried out within the full potential linearized augmented plane-wave (FP-LAPW) method based on the WIEN2k code by using generalized gradient approximation (GGA) and generalized gradient approximation with U Hubbard parameters (GGA+U) approach. The studies of the band structure, density of states and charge density reveal that HfNiO2+Vo are more appropriate dopant to enhance the conductivity for RRAM devices.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218625X21500396

Reference38 articles.

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