A first-principles study of Cu and Al doping in ZrO2 for RRAM device applications-Reference-Cited by-同舟云学术

A first-principles study of Cu and Al doping in ZrO2 for RRAM device applications

Published:2019-10 Issue: Volume:168 Page:108842
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Hussain Fayyaz,Imran Muhammad,Khalil R.M. Arif,Sattar M. Atif,Niaz Niaz Ahmad,Rana Anwar Manzoor,Ismail Muhammad,Khera Ejaz Ahmad,Rasheed Umbreen,Mumtaz Faqeeha,Javed Tariq,Kim Sungjun

Funder

Cheongju National University of Education

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference38 articles.

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3. Substitutionally doped phosphorene: electronic properties and gas sensing;Suvansinpan;Nanotechnology,2016

4. Improving the electrical performance of resistive switching memory using doping technology;Wang;Sci. Bull.,2012

5. An integrated phase change memory cell with ge nanowire diode for cross-point memory;Zhang;Proceedings of the IEEE symposium on VLSI technology,2007

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