Strained silicon NMOS with nickel-silicide metal gate
Author:
Publisher
Japan Soc. Applied Phys
Link
http://xplorestaging.ieee.org/ielx5/8657/27436/01221106.pdf?arnumber=1221106
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Review: Numerical Simulations of Semiconductor Piezoresistance for Computer-Aided Designs;IEEE Journal of the Electron Devices Society;2023
2. Variability analysis of a graded-channel dual-material double-gate strained-silicon MOSFET with fixed charges;Journal of Computational Electronics;2022-01-15
3. Analog/RF Performance of Triple Material Gate Stack-Graded Channel Double Gate-Junctionless Strained-silicon MOSFET with Fixed Charges;Silicon;2021-10-29
4. Analog/RF Performance of Graded Channel Gate Stack Triple Material Double Gate Strained-Si MOSFET with Fixed Charges;Silicon;2021-03-22
5. The analog/RF performance of a strained-Si graded-channel dual-material double-gate MOSFET with interface charges;Journal of Computational Electronics;2020-09-08
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