Strained Si<inf>1−x</inf>Ge<inf>x</inf>-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond-Reference-Cited by-同舟云学术

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Strained Si1−xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond

Published:2014-06 Issue: Volume: Page:
ISSN:
Container-title:2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers
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Author:

Hashemi Pouya,Balakrishnan Karthik,Majumdar Amlan,Khakifirooz Ali,Kim Wanki,Baraskar Ashish,Yang Li A.,Chan Kevin,Engelmann Sebastian U.,Ott John A.,Antoniadis Dimitri A.,Leobandung Effendi,Park Dae-Gyu

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6886509/6894335/06894344.pdf?arnumber=6894344

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strain Evolution in SiGe Nanosheet Transistor Process Flow;IEEE Transactions on Electron Devices;2024-05

2. Demonstration of HfO₂-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si_0.8Ge_0.2 by Trimethylaluminum Pre-Treatment and Al Scavenger;IEEE Journal of the Electron Devices Society;2023

3. Beyond-Silicon Computing: Nano-Technologies, Nano-Design, and Nano-Systems;Emerging Computing: From Devices to Systems;2022-07-09

4. Three-Dimensional TID Hardening Design for 14 nm Node SOI FinFETs;Eng;2021-12-03

5. Strain engineering in functional materials;AIP Advances;2019-03

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