A highly scalable 8-layer 3D vertical-gate (VG) TFT NAND Flash using junction-free buried channel BE-SONOS device-Reference-Cited by-同舟云学术

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A highly scalable 8-layer 3D vertical-gate (VG) TFT NAND Flash using junction-free buried channel BE-SONOS device

Published:2010-06 Issue: Volume: Page:
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Container-title:2010 Symposium on VLSI Technology
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Author:

Lue Hang-Ting,Hsu Tzu-Hsuan,Hsiao Yi-Hsuan,Hong S. P.,Wu M. T.,Hsu F. H.,Lien N. Z.,Wang Szu-Yu,Hsieh Jung-Yu,Yang Ling-Wu,Yang Tahone,Chen Kuang-Chao,Hsieh Kuang-Yeu,Lu Chih-Yuan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5548927/5556114/05556199.pdf?arnumber=5556199

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