Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices With SiON Tunneling Oxide-Reference-Cited by-同舟云学术

Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices With SiON Tunneling Oxide

Published:2023-04 Issue:4 Volume:70 Page:634-640
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Cao Jingchen¹^ORCID,Wynocker Isabella¹,Zhang En Xia¹^ORCID,Reed Robert A.¹^ORCID,Alles Michael L.¹,Schrimpf Ronald D.¹^ORCID,Fleetwood Daniel M.¹^ORCID,Arreghini Antonio²^ORCID,Rosmeulen Maarten²^ORCID,Bastos João P.²^ORCID,Bosch Geert Van den²^ORCID,Linten Dimitri²

Affiliation:

1. Department of Electrical and Computer Engineering, Vanderbilt University, Nashville, TN, USA

2. imec, Leuven, Belgium

Funder

Defense Threat Reduction Agency through its Basic Research Program

Air Force Office of Scientific Research

SyBBURE Searle Undergraduate Research Program

SCALE Workforce Development Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/10103954/09979674.pdf?arnumber=9979674

Reference33 articles.

1. A Compact Explicit Model for Long-Channel Gate-All-Around Junctionless MOSFETs. Part I: DC Characteristics

2. Impact of critical geometry dimension on channel boosting potential in 3D NAND memory;jiang;Proc 13th IEEE Int Conf Solid-State Integr Circuit Technol (ICSICT),2016

3. Correlating the Radiation Response of MOS Capacitors and Transistors

4. A Semi-Analytical Model for Macaroni MOSFETs With Application to Vertical Flash Memories

5. A study of cycling induced degradation mechanisms in Si nanocrystal memory devices

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide;IEEE Transactions on Nuclear Science;2024-08