A study of cycling induced degradation mechanisms in Si nanocrystal memory devices-Reference-Cited by-同舟云学术

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A study of cycling induced degradation mechanisms in Si nanocrystal memory devices

Published:2011-05-16 Issue:25 Volume:22 Page:254009
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Jiang Dandan,Zhang Manhong,Huo Zongliang,Wang Qin,Liu Jing,Yu Zhaoan,Yang Xiaonan,Wang Yong,Zhang Bo,Chen Junning,Liu Ming

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/22/i=25/a=254009/pdf

Reference19 articles.

1. A silicon nanocrystals based memory

2. Design Considerations for Sub-90-nm Split-Gate Flash-Memory Cells

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