Design and Optimization of BiCMOS SiGe PA for Millimeter-Wave Applications
Author:
Affiliation:
1. Global Foundries Inc,Bangalore,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10463756/10463710/10463862.pdf?arnumber=10463862
Reference8 articles.
1. A Low-Cost Scalable 32-Element 28-GHz Phased Array Transceiver for 5G Communication Links Based on a $2\times 2$ Beamformer Flip-Chip Unit Cell
2. A 64-Element 28-GHz Phased-Array Transceiver With 52-dBm EIRP and 8–12-Gb/s 5G Link at 300 Meters Without Any Calibration
3. SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay
4. A 28-GHz SiGe BiCMOS PA With 32% Efficiency and 23-dBm Output Power
5. A Wideband 20 to 28 GHz Signal Generator MMIC With 30.8 dBm Output Power Based on a Power Amplifier Cell With 31% PAE in SiGe
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