SiGe HBT technology with f<inf>T</inf>/f<inf>max</inf> of 300GHz/500GHz and 2.0 ps CML gate delay-Reference-Cited by-同舟云学术

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SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay

Published:2010-12 Issue: Volume: Page:
ISSN:
Container-title:2010 International Electron Devices Meeting
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Author:

Heinemann B.,Barth R.,Bolze D.,Drews J.,Fischer G. G.,Fox A.,Fursenko O.,Grabolla T.,Haak U.,Knoll D.,Kurps R.,Lisker M.,Marschmeyer S.,Rucker H.,Schmidt D.,Schmidt J.,Schubert M. A.,Tillack B.,Wipf C.,Wolansky D.,Yamamoto Y.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5692854/5703218/05703452.pdf?arnumber=5703452

Cited by 86 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Towards Passive Imaging With Uncooled, Low-NEP SiGe HBT Terahertz Direct Detectors;IEEE Transactions on Terahertz Science and Technology;2024-09

2. Design and Optimization of BiCMOS SiGe PA for Millimeter-Wave Applications;2023 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON);2023-12-11

3. Characterization and Compact Modeling of the Thermal Resistance of SiGe HBTs From Cryogenic to Room Temperature;IEEE Transactions on Electron Devices;2023-09

4. A 100 GBd PAM-4 Combiner and Driver in SiGe BiCMOS;IEEE Microwave and Wireless Technology Letters;2023-09

5. Spur Canceling Technique by Folded xor Gate Phase Detector and Its Application to a Millimeter-Wave SiGe BiCMOS PLL;IEEE Transactions on Microwave Theory and Techniques;2023-08

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