A 28-GHz SiGe BiCMOS PA With 32% Efficiency and 23-dBm Output Power-Reference-Cited by-同舟云学术

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A 28-GHz SiGe BiCMOS PA With 32% Efficiency and 23-dBm Output Power

Published:2017-06 Issue:6 Volume:52 Page:1680-1686
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Sarkar Anirban^ORCID,Aryanfar Farshid,Floyd Brian A.^ORCID

Funder

Samsung Research America

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/7933283/07904622.pdf?arnumber=7904622

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A V-Band Wideband Power Amplifier with High Gain in a 130 nm SiGe BiCMOS Process;Micromachines;2024-08-26

2. A 39 GHz Doherty-Like Power Amplifier With 22dBm Output Power and 21% Power-Added Efficiency at 6dB Power Back-Off;IEEE Journal on Emerging and Selected Topics in Circuits and Systems;2024-03

3. A Highly Efficient, Linear Ka-Band SiGe HBT Cascode Power Amplifier With a Compact Lumped Element Coupled Line Impedance Inverting Balun;IEEE Transactions on Microwave Theory and Techniques;2024

4. Power amplifiers monolithic microwave integrated circuit design for 5G applications;New Materials and Devices Enabling 5G Applications and Beyond;2024

5. Design of Single-Ended and Differential Power Amplifiers using SiGe HBT for SATCOM Applications;2023 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON);2023-12-11

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