Write Disturb in Ferroelectric FETs and Its Implication for 1T-FeFET AND Memory Arrays-Reference-Cited by-同舟云学术

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Write Disturb in Ferroelectric FETs and Its Implication for 1T-FeFET AND Memory Arrays

Published:2018-11 Issue:11 Volume:39 Page:1656-1659
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Ni Kai^ORCID,Li Xueqing^ORCID,Smith Jeffrey A.,Jerry Matthew^ORCID,Datta Suman^ORCID

Funder

ASCENT, one of the six centers in JUMP

Semiconductor Research Corporation

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/8502770/08474379.pdf?arnumber=8474379

Cited by 75 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Revealing Mechanism of Non-Accumulative Disturb and Approach Toward Disturb Suppression in HZO/Si FeFET Memory;2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits);2024-06-16

2. Deep random forest with ferroelectric analog content addressable memory;Science Advances;2024-06-07

3. Demonstration of bias scheme for ferroelectric field-effect transistor (FeFET) based AND array operation;Solid-State Electronics;2024-06

4. A Survey of Emerging Memory in a Microcontroller Unit;Micromachines;2024-04-01

5. FeFET-Based MirrorBit Cell for High-Density NVM Storage;IEEE Transactions on Electron Devices;2024-04

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