FeFET-Based MirrorBit Cell for High-Density NVM Storage-Reference-Cited by-同舟云学术

FeFET-Based MirrorBit Cell for High-Density NVM Storage

Published:2024-04 Issue:4 Volume:71 Page:2380-2385
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Meihar Paritosh¹^ORCID,Srinu Rowtu¹^ORCID,Saraswat Vivek¹^ORCID,Lashkare Sandip²^ORCID,Mulaosmanovic Halid³^ORCID,Singh Ajay Kumar¹^ORCID,Dünkel Stefan³,Beyer Sven³,Ganguly Udayan¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, India

2. Department of Electrical Engineering, Indian Institute of Technology Gandhinagar, Gandhinagar, India

3. GlobalFoundries Fab1 LLC and Company KG, Dresden, Germany

Funder

Department of Science and Technology (DST) Nano Mission

Ministry of Electronics and Information Technology

Department of Electronics through the Nano-Electronics Network for Research and Applications (NNetRA) through Project of Government of India

German Bundesministerium für Wirtschaft

State of Saxony in the frame of the “Important Project of Common European Interest (IPCEI).”

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10482422/10431721.pdf?arnumber=10431721

Reference25 articles.

1. Fifty Years of Moore's Law

2. Toward High-Performance Computing and Big Data Analytics Convergence: The Case of Spark-DIY

3. Scaling and Performance Challenges of Future DRAM

4. Transistor scaling with novel materials

5. Recent Progress on 3D NAND Flash Technologies

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