Speed optimized diode-triggered SCR (DTSCR) for RF ESD protection of ultra-sensitive IC nodes in advanced technologies-Reference-Cited by-同舟云学术

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Speed optimized diode-triggered SCR (DTSCR) for RF ESD protection of ultra-sensitive IC nodes in advanced technologies

Published:2005-09 Issue:3 Volume:5 Page:532-542
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Mergens M.P.J.,Russ C.C.,Verhaege K.G.,Armer J.,Jozwiak P.C.,Mohn R.P.,Keppens B.,Trinh C.S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/7298/32989/01545917.pdf?arnumber=1545917

Cited by 61 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modified Low-Voltage Triggered Silicon-Controlled Rectifier for ESD Protection;IEEE Electron Device Letters;2024-05

2. A novel dual-directional DTSCR in twin-well process for ultra-low-voltage ESD protection;Solid-State Electronics;2024-02

3. A High Holding Voltage Diode-Triggered SCR for Low-Voltage ESD Application;2024 International Conference on Electronics, Information, and Communication (ICEIC);2024-01-28

4. Compact Models for Simulation of On-Chip ESD Protection Networks;IEEE Transactions on Electron Devices;2024-01

5. Power-Line-Triggered ESD Protection SCR for 0–20 GHz Applications in CMOS Technology;IEEE Transactions on Electron Devices;2023-12

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