Modified Low-Voltage Triggered Silicon-Controlled Rectifier for ESD Protection-Reference-Cited by-同舟云学术

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Modified Low-Voltage Triggered Silicon-Controlled Rectifier for ESD Protection

Published:2024-05 Issue:5 Volume:45 Page:746-749
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Yang Zhaonian¹^ORCID,Qi Changlin¹,Fu Dongbing²,Pu Shi³,Wang Xin¹,Yang Yuan¹^ORCID

Affiliation:

1. Shaanxi Key Laboratory of Complex System Control and Intelligent Information Processing, Xi’an University of Technology, Xi’an, China

2. Chongqing Gigachip Technology Company Ltd., Chongqing, China

3. Xi’an Xiangteng Microelectronics Company Ltd., Xi’an, China

Funder

National Natural Science Foundation of China

Shaanxi Innovation Capability Support Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10509537/10445374.pdf?arnumber=10445374

Reference30 articles.

1. A low leakage poly-gated SCR device for ESD protection in 65nm CMOS process

2. On-Chip ESD Protection Device for High-Speed I/O Applications in CMOS Technology

3. A novel, SCR-based, distributed power supply ESD network for advanced CMOS technologies

4. Design and Integration of Novel SCR-Based Devices for ESD Protection in CMOS/BiCMOS Technologies

5. Speed optimized diode-triggered SCR (DTSCR) for RF ESD protection of ultra-sensitive IC nodes in advanced technologies

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