Millimeter-Wave LNA and PA MMICs With 10:1 and 4:1 Bandwidth in a 35-nm Gate-Length InGaAs mHEMT Technology
Author:
Affiliation:
1. IAF,Fraunhofer Institute for Applied Solid State Physics,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10187888/10187785/10188135.pdf?arnumber=10188135
Reference14 articles.
1. Broadband 300-GHz Power Amplifier MMICs in InGaAs mHEMT Technology
2. 180–265 GHz, 17–24 dBm output power broadband, high-gain power amplifiers in InP HBT
3. 35 nm mHEMT Technology for THz and ultra low noise applications
4. A 1–160-GHz InP Distributed Amplifier Using 3-D Interdigital Capacitors
5. Performance Analysis of a Low-Noise, Highly Linear Distributed Amplifier in 500-nm InP/InGaAs DHBT Technology
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1. A 52-to-86GHz V-/E-Band GaN Distributed Combined Power Amplifier with Output Power Beyond 1W and 34GHz Bandwidth;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16
2. Low-Noise Power-Amplifier MMICs for the WR4.3 and WR3.4 Bands in a 35-nm Gate-Length InGaAs mHEMT Technology;IEEE Microwave and Wireless Technology Letters;2024-06
3. A $>$120-GHz Bandwidth, $>$20-dBm Pout, $<$6-dB Noise-Figure Distributed Amplifier MMIC in a GaN-on-SiC HEMT Technology;IEEE Transactions on Microwave Theory and Techniques;2024
4. Multi-Channel PA, LNA, and Switch MMICs for Beam-Switching Applications at 160 GHz, Based on an InGaAs mHEMT Technology;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
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