Measurements and TCAD simulations of bulk and surface radiation damage effects in silicon detectors-Reference-Cited by-同舟云学术

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Measurements and TCAD simulations of bulk and surface radiation damage effects in silicon detectors

Published:2015-10 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)
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Author:

Moscatelli F.,Maccagnani P.,Passeri D.,Bilei G.M.,Servoli L.,Morozzi A.,Dalla Betta G.-F.,Mendicino R.,Boscardin M.,Zorzi N.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7572833/7581238/07581944.pdf?arnumber=7581944

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Using TCAD Simulations to Verify the McWhorter Method for Assessing Trapped Charge in Dielectric;2023 IEEE 33rd International Conference on Microelectronics (MIEL);2023-10-16

2. Evaluation of the Radiation Hardness of Photodiodes in 180-nm CMOS Technology for Medical Applications;IEEE Transactions on Nuclear Science;2021-09

3. Insights into radiation displacement defect in an insulated-gate bipolar transistor;AIP Advances;2021-02-01

4. Investigation of Single Event Transient Effects in Junctionless Accumulation Mode MOSFET;IEEE Transactions on Device and Materials Reliability;2020-09

5. Modeling of neutron radiation-induced defects in silicon particle detectors;Semiconductor Science and Technology;2020-03-12

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