Using TCAD Simulations to Verify the McWhorter Method for Assessing Trapped Charge in Dielectric-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Using TCAD Simulations to Verify the McWhorter Method for Assessing Trapped Charge in Dielectric

Published:2023-10-16 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 33rd International Conference on Microelectronics (MIEL)
language:
Short-container-title:

Author:

Veljković S.¹,Ristić G.¹,Danković D.¹,Palma A. J.²,Andjelković M.³,Duane R.⁴

Affiliation:

1. University of Niš,Faculty of Electronic Engineering,Department of Microelectronics,Niš,Serbia,18000

2. University of Granada,Granada,Spain

3. IHP GmbH Institute for High Performance Microelectronics,Frankfurt Oder,Germany

4. University College Cork,Tyndall National Institute,Cork,Ireland

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10315714/10315787/10315943.pdf?arnumber=10315943

Reference11 articles.

1. Performance analysis and optimization of 10 nm TG N- and P-channel SOI FinFETs for circuit applications

2. Impact of low-dose radiation on nitrided lateral 4H-SiC MOSFETs and the related mechanisms

3. Commercial P-Channel Power VDMOSFET as X-ray Dosimeter;risti?;Electronics,2022

4. NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs

5. inverse modelling of trapped charge in hot-carrier stressed nmosfet;duane;30th European Solid-State Device Research Conference,2000

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP