Two-dimensional nonisothermal carrier flow in a transistor structure under reactive circuit conditions
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31778/01479575.pdf?arnumber=1479575
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Advanced RBSOA analysis for advanced power BJTs;Microelectronics Reliability;1996-07
2. Failure mechanisms in AlGaAs/GaAs power heterojunction bipolar transistors;IEEE Transactions on Electron Devices;1996
3. On the reverse bias safe operating area of power bipolar transistors during inductive turn-off;Solid-State Electronics;1994-02
4. n‐CdSe/p‐ZnTe based wide band‐gap light emitters: Numerical simulation and design;Journal of Applied Physics;1993-05
5. 3D NUMERICAL SIMULATION OF TRANSIENT PROCESSES IN SEMICONDUCTOR DEVICES;COMPEL - The international journal for computation and mathematics in electrical and electronic engineering;1991-03-01
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