Failure mechanisms in AlGaAs/GaAs power heterojunction bipolar transistors
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/10240/00481721.pdf?arnumber=481721
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Algorithm and installation for measuring the current lacing voltage in high-power RF and microwave bipolar and heterojunction bipolar transistors;ST PETER POLY U J-PH;2022
2. Comprehensive study of hydrogen sensing characteristics of Pd metal–oxide–semiconductor (MOS) transistors with Al0.24Ga0.76As and In0.49Ga0.51P Schottky contact layers;Sensors and Actuators B: Chemical;2007-01
3. A 3.2-V operation single-chip dual-band AlGaAs/GaAs HBT MMIC power amplifier with active feedback circuit technique;IEEE Journal of Solid-State Circuits;2000-08
4. Photo-luminescence and transmission electron microscope studies of low- and high-reliability AlGaAs/GaAs HBTs;Solid-State Electronics;2000-04
5. Reliability characteristics of GaAs and InP-based heterojunction bipolar transistors;Microelectronics Reliability;1999-12
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