Reliability characteristics of GaAs and InP-based heterojunction bipolar transistors

Author:

Pavlidis Dimitris

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. AlGaAs/GaAs HBT reliability: dependence on material and correlation to baseband noise;Bayraktaroglu,1997

2. Characterization of current-induced degradation in Be-doped HBTs based in GaAs and InP;Tanaka;IEEE Trans on Electron Devices,1993

3. Reliability of AlInAs/GaInAs heterojunction bipolar transistors;Hafizi;IEEE, Transactions on Electron Devices,1993

4. Reliability analysis of GaAs/AlGaAs HBTs under forward current/temperature stress;Hafizi,1990

5. Reliability of self-aligned, ledge passivated 7.5 GHz GaAs/AlGaAs HBT power amplifiers under RF bias stress at elevated temperatures;Henderson,1995

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1. High-speed InP-based heterojunction bipolar transistors;Reference Module in Materials Science and Materials Engineering;2023

2. GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors;Materials and Reliability Handbook for Semiconductor Optical and Electron Devices;2012-08-23

3. Very wide current-regime operation of an InP/InGaAs tunneling emitter bipolar transistor (TEBT);Microelectronics Reliability;2007-08

4. A Survey of Heterojunction Bipolar Transistor (HBT) Device Reliability;IEEE Transactions on Components and Packaging Technologies;2004-03

5. Transimpedance amplifier-based full low-frequency noise characterization setup for Si/SiGe HBTs;IEEE Transactions on Electron Devices;2001-04

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