Author:
ADAMSONE A.I.,POLSKY B.S.
Abstract
A half‐implicit absolutely stable method for 3D simulation of the transient processes in semiconductor devices is proposed. The calculations of transient processes in bipolar transistor were carried out and were compared with the results of 2D simulation.
Subject
Applied Mathematics,Electrical and Electronic Engineering,Computational Theory and Mathematics,Computer Science Applications
Cited by
2 articles.
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1. Transient device modeling using the Lei‐Ting hydrodynamic balance equations;Journal of Applied Physics;1996-08
2. TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION;COMPEL - The international journal for computation and mathematics in electrical and electronic engineering;1992-02