TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION-Reference-Cited by-同舟云学术

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TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION

Published:1992-02 Issue:2 Volume:11 Page:311-325
ISSN:0332-1649
Container-title:COMPEL - The international journal for computation and mathematics in electrical and electronic engineering
language:en
Short-container-title:COMPEL

Author:

LYUMKIS E.D.,POLSKY B.S.,SHUR A.I.,VISOCKY P.

Publisher

Emerald

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computational Theory and Mathematics,Computer Science Applications

Reference17 articles.

1. Diffusion of Hot and Cold Electrons in Semiconductor Barriers

2. Numerical simulation of hot-carrier transport in silicon bipolar transistors

3. The influence of the thermal equilibrium approximation on the accuracy of classical two-dimensional numerical modeling of silicon submicrometer MOS transistors

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