A ferroelectric-piezoelectric random access memory
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31690/01476631.pdf?arnumber=1476631
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ferroelectricity in hafnia controlled via surface electrochemical state;Nature Materials;2023-08-14
2. Ultrahigh-density ferroelectric data storage using scanning nonlinear dielectric microscopy;Scanning Nonlinear Dielectric Microscopy;2020
3. Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor;Scientific Reports;2016-03-23
4. Production and PFM Characterization of Barium Titanate Nanofibers;Ferroelectrics;2012-01
5. Actual information storage with a recording density of 4 Tbit/in.2 in a ferroelectric recording medium;Applied Physics Letters;2010-08-30
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