Funder
U.S. Department of Energy
National Academy of Sciences of Ukraine
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry
Reference52 articles.
1. Boscke, T. S. et al. Phase transitions in ferroelectric silicon doped hafnium oxide. Appl. Phys. Lett. 99, 112904 (2011).
2. Muller, J. et al. Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications. Appl. Phys. Lett. 99, 112901 (2011).
3. Auciello, O., Scott, J. F. & Ramesh, R. The physics of ferroelectric memories. Phys. Today 51, 22–27 (1998).
4. Crawford, J. C. Ferroelectric-piezoelectric random access memory. IEEE Trans. Electron Dev. 18, 951–958 (1971).
5. Tsymbal, E. Y. & Kohlstedt, H. Tunneling across a ferroelectric. Science 313, 181–183 (2006).
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