Photo-Stable Transparent Nonvolatile Memory Thin-Film Transistors Using In–Ga–Zn–O Channel and ZnO Charge-Trap Layers-Reference-Cited by-同舟云学术

Photo-Stable Transparent Nonvolatile Memory Thin-Film Transistors Using In–Ga–Zn–O Channel and ZnO Charge-Trap Layers

Published:2015-11 Issue:11 Volume:36 Page:1153-1156
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kim S. J.,Lee W. H.,Byun C. W.,Hwang C. S.,Yoon S. M.

Funder

Information/Communication Technology (ICT) Research and Development Program through the Ministry of Science, ICT and Future Planning/Institute for Information and Communications Technology Promotion

National Research Foundation of Korea through the Korean Government within the Ministry of Education, Science and Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7302615/07270261.pdf?arnumber=7270261

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