Mechanically Robust and Highly Flexible Nonvolatile Charge‐Trap Memory Transistors Using Conducting‐Polymer Electrodes and Oxide Semiconductors on Ultrathin Polyimide Film Substrates-Reference-Cited by-同舟云学术

Mechanically Robust and Highly Flexible Nonvolatile Charge‐Trap Memory Transistors Using Conducting‐Polymer Electrodes and Oxide Semiconductors on Ultrathin Polyimide Film Substrates

Published:2019-08-12 Issue:10 Volume:4 Page:1900348
ISSN:2365-709X
Container-title:Advanced Materials Technologies
language:en
Short-container-title:Adv. Mater. Technol.

Author:

Yang Ji‐Hee¹,Kim Do‐Kyun²,Yoon Myung‐Han²^ORCID,Kim Gi‐Heon³,Yoon Sung‐Min¹^ORCID

Affiliation:

1. Department of Advanced Materials Engineering for Information and ElectronicsKyung Hee University Yongin Gyeonggi‐do 17104 Republic of Korea

2. School of Materials Science and EngineeringGwangju Institute of Science and Technology Gwangju 61005 Republic of Korea

3. Electronics and Telecommunications Research Institute Daejeon 34129 Republic of Korea

Funder

Korea Evaluation Institute of Industrial Technology

Publisher

Wiley

Subject

Industrial and Manufacturing Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admt.201900348

Reference43 articles.

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5. Transparent Flash Memory Using Single Ta2O5 Layer for Both Charge-Trapping and Tunneling Dielectrics

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