Effect of Alumina Buffers on the Stability of Top-Gate Amorphous InGaZnO Thin-Film Transistors on Flexible Substrates-Reference-Cited by-同舟云学术

Effect of Alumina Buffers on the Stability of Top-Gate Amorphous InGaZnO Thin-Film Transistors on Flexible Substrates

Published:2015-09 Issue:9 Volume:36 Page:917-919
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Ok Kyung-Chul,Oh Saeroonter,Jeong Hyun-Jun,Bae Jong Uk,Park Jin-Seong

Funder

Industry Technology Research and Development Program within the Ministry of Trade, Industry and Energy through the Korea Evaluation Institute of Industrial Technology

LG Display Company, Ltd.

Ministry of Science, ICT and Future Planning through the Institute for Information and Communications Technology Promotion

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7217862/07167653.pdf?arnumber=7167653

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