A Study on the Degradation of In-Ga–Zn-O Thin-Film Transistors Under Current Stress by Local Variations in Density of States and Trapped Charge Distribution-Reference-Cited by-同舟云学术

A Study on the Degradation of In-Ga–Zn-O Thin-Film Transistors Under Current Stress by Local Variations in Density of States and Trapped Charge Distribution

Published:2015-07 Issue:7 Volume:36 Page:690-692
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Choi Sungju,Kim Hyeongjung,Jo Chunhyung,Kim Hyun-Suk,Choi Sung-Jin,Kim Dong Myong,Park Jozeph,Kim Dae Hwan

Funder

National Research Foundation of Korea (NRF)

funded by the Korean Government [Ministry of Education, Science and Technology (MEST)]

BK21+ (Educational Research Team for Creative Engineers on Material- Device-Circuit Co-Design)

IC Design Education Center (IDEC)

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7132642/07114219.pdf?arnumber=7114219

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