Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density-Reference-Cited by-同舟云学术

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Plasma Enhanced Atomic Layer Deposition Passivated HfO₂/AlN/In_0.53Ga_0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density

Published:2015-12 Issue:12 Volume:36 Page:1277-1280
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Luc Quang Ho,Do Huy Binh,Ha Minh Thien Huu,Hu Chenming Calvin,Lin Yueh Chin,Chang Edward Yi

Funder

NCTU-UCB I-RiCE Program through the Ministry of Science and Technology, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7328593/07289375.pdf?arnumber=7289375

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Inversion-mode InGaAs FinFETs for RF applications;Applied Physics Express;2023-09-01

2. Metal-Induced Trap States: The Roles of Interface and Border Traps in HfO2/InGaAs;Micromachines;2023-08-15

3. Electrical Characteristics of In_0.53Ga_0.47As Gate-All-Around MOSFETs With Different Nanowire Shapes;IEEE Transactions on Electron Devices;2022-08

4. Nitrogen-Passivated (010) In0.53Ga0.47As FinFETs With High Peak g m and Reduced Leakage Current;IEEE Transactions on Electron Devices;2022-02

5. Sub-10 nm Top Width Nanowire InGaAs Gate-All-Around MOSFETs With Improved Subthreshold Characteristics and Device Reliability;IEEE Journal of the Electron Devices Society;2022

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