Electromigration recovery modeling and analysis under time-dependent current and temperature stressing-Reference-Cited by-同舟云学术

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Electromigration recovery modeling and analysis under time-dependent current and temperature stressing

Published:2016-01 Issue: Volume: Page:
ISSN:
Container-title:2016 21st Asia and South Pacific Design Automation Conference (ASP-DAC)
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Author:

Huang Xin,Sukharev Valeriy,Kim Taeyoung,Chen Haibao,Tan Sheldon X.-D.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7422345/7427971/7428018.pdf?arnumber=7428018

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Built-in Self-prevention (BISP) for runtime ageing effects of TSVs in 3D ICs;Integration;2024-01

2. Dynamic Electro- Thermo- Migration Coupling Analysis of RDL Structure for 2.5D Integration;2023 International Applied Computational Electromagnetics Society Symposium (ACES-China);2023-08-15

3. On-chip Electromigration Sensor for Silicon Lifecycle Management of Nanoscale VLSI;2023 IEEE European Test Symposium (ETS);2023-05-22

4. Electromigration-aware design technology co-optimization for SRAM in advanced technology nodes;2023 Design, Automation & Test in Europe Conference & Exhibition (DATE);2023-04

5. Combined Modeling of Electromigration, Thermal and Stress Migration in AC Interconnect Lines;Proceedings of the 2023 International Symposium on Physical Design;2023-03-26

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