InAlN/GaN HEMT technology for robust HF receivers: An overview of the HF and LF noise performances-Reference-Cited by-同舟云学术

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InAlN/GaN HEMT technology for robust HF receivers: An overview of the HF and LF noise performances

Published:2015-06 Issue: Volume: Page:
ISSN:
Container-title:2015 International Conference on Noise and Fluctuations (ICNF)
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Author:

Nsele S. D.,Tartarin J. G.,Escotte L.,Piotrowicz S.,Delage S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7269172/7288529/07288538.pdf?arnumber=7288538

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparison of the low noise performance of GaN HEMTs and MIS-HEMTs at cryogenic temperatures;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

2. Noise performance of back‐barrier engineered GaN‐based trigate HEMT for X‐band applications;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-07-30

3. Noise characterisation of GaN current aperture vertical electron transistor metal‐insulated semiconductor field effect transistor with Δ‐shaped gate for low noise radio frequency amplifiers;International Journal of RF and Microwave Computer-Aided Engineering;2022-09-15

4. DC Power-Optimized Ka-Band GaN-on-Si Low-Noise Amplifier With 1.5 dB Noise Figure;IEEE Microwave and Wireless Components Letters;2022-06

5. Influence of HfAlOx in DC, RF and Microwave Noise Performance of Dual-Channel Single-Gate InAs MOSHEMT;Journal of Electronic Materials;2021-03-30

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